FS50R06YL4 Infineon Technologies, FS50R06YL4 Datasheet - Page 7

• Manufacturer Part Number: FS50R06YL4
• Description: IGBT Modules N-CH 600V 55A
• Manufacturer: Infineon Technologies

Specifications of FS50R06YL4

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 55 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2
• Housing: EasyPACK 2

IGBT-Module
IGBT-Modules
Technische Information / technical information
Transienter Wärmewiderstand
transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
reverse bias safe operation area (RBSOA)
120
100
i
r
r
i
i
i
i
80
60
40
20
1,0000E+01
1,0000E+00
[K/kW]: IGBT
[K/kW]: Diode
[s]: IGBT
[s]: Diode
1,0000E-01
1,0000E-02
0
0
0,001
IC,Chip
IC, Modul
200
0,00075
0,00056
57,0
75,0
0,01
1
FS50R06YL4
7 (9)
0,02088
0,01240
V
190,0
210,0
CE
2
t (s)
[V]
0,1
400
V
GE
0,14800
0,12800
= ±15V, T
532,0
885,0
3
Zth:IGBT
Zth:Diode
1
j
=125°C
Z
thJH
0,25430
0,25430
171,0
330,0
600
= f (t)
4
vorläufige Daten
preliminary data
10