FD400R33KF2C-K Infineon Technologies, FD400R33KF2C-K Datasheet - Page 2

• Manufacturer Part Number: FD400R33KF2C-K
• Description: IGBT Modules N-CH 3.3KV 660A
• Manufacturer: Infineon Technologies

Specifications of FD400R33KF2C-K

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 3300 V
• Continuous Collector Current At 25 C: 660 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV130
• Ic (max): 400.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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Vorläufige Daten
preliminary data
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