FD800R17KE3_B2 Infineon Technologies, FD800R17KE3_B2 Datasheet - Page 7

• Manufacturer Part Number: FD800R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.2KA
• Manufacturer: Infineon Technologies

Specifications of FD800R17KE3_B2

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
%SQh ) U3fW
%SQh ) U3fW
u?Ja- ) U W
u?Ja- ) U W
%SQh ) U3fW
%SQh ) U3fW
u?Ja- ) U W
u?Ja- ) U W
>
>
>
>
A54 ) O2 ,-. ) L
A54 ) O2 ,-. ) L
A54 ) O2 ,-. ) L
A54 ) O2 ,-. ) L
400
350
300
250
200
150
100
100
50
10
0
1
0,001
&
&
&
&
0
@E
@E
@E
@E
200 400 600 800 1000 1200 1400 1600
1
1
1
1
%SQh2 '( )
u?Ja- 1
1
1
1
1
0,01
>
>
>
>
`
`
`
`
,
,
,
,
!*+
$
$
$
$
+
+
+
+
1
1
1
1
FD800R17KE3_B2
3f s7t
1
1
1
1
Ns#C$@t
Ns t
0,1
s t
`
`
`
`
2H
2
$
$
$
$
2H
2 H
1
+
+
+
+
I
<2
2 L
"
H
2H
2
10
7
%SQh ) U AW
%SQh ) U AW
%SQh ) U AW
%SQh ) U AW
3f )
3f )
3f )
3f )
>
>
>
>
!
350
300
250
200
150
100
50
0
&
&
&
&
0
72 ,-. ) L
72 ,-. ) L
72 ,-. ) L
72 ,-. ) L
2
1
1
1
1
%SQh2 '( )
1
1
1
1
4
`
`
`
`
,
,
,
,
6
!*+
$
$
$
$
+
+
+
+
8
A sOt
Vorläufige Daten
preliminary data
10
12
14
16
18