BSM150GB170DL Infineon Technologies, BSM150GB170DL Datasheet - Page 3
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BSM150GB170DL
Manufacturer Part Number
BSM150GB170DL
Description
IGBT Modules N-CH 1.7KV 300A
Manufacturer
Infineon Technologies
Datasheet
1.BSM150GB170DL.pdf
(4 pages)
Specifications of BSM150GB170DL
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
300 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
300A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM150GB170DLC
Manufacturer:
INFINEON
Quantity:
219
Part Number:
BSM150GB170DLC
Quantity:
50
I
[A]
I
[A]
E
[mJ]
C
C
300
250
200
150
100
300
250
200
150
100
250
200
150
100
50
50
50
0
0
0
0,0
5
0
BSM 150 GB 170 DL / 1
Bild / Fig. 1
Ausgangskennlinie (typisch) /
Output characteristic (typical)
I
V
BSM 150 GB 170 DL / 3
Bild / Fig. 3
Übertragungscharakteristic (typisch) /
Transfer characteristic (typical)
I
V
BSM 150 GB 170 DL / 5
Bild / Fig. 5
Schaltverluste (typisch) /
Switching losses (typical)
E
R
C
C
GE
CE
on
gon
= f(V
= f(V
= f (I
= 15V
= 20V
= R
0,5
CE
GE
C
goff
6
)
)
), E
50
= 10 , V
1,0
off
= f (I
7
1,5
C
CE
), E
100
= 900V, T
Tj = 25°C
Tj = 125°C
rec
2,0
8
= f (I
C
150
j
)
2,5
= 125°C
9
3,0
200
10
3,5
11
4,0
250
V
V
I
Tj = 25°C
Tj = 125°C
C
CE
GE
[A]
[V]
[V]
4,5
12
Eoff
Eon
Erec
300
5,0
13
I
[A]
I
[A]
E
[mJ]
C
F
160
140
120
100
300
250
200
150
100
300
250
200
150
100
80
60
40
20
50
50
0
0
0
0,0
0,0
0
BSM 150 GB 170 DL / 2
Bild / Fig. 2
Ausgangskennlinienfeld (typisch) /
Output characteristic (typical)
I
T
BSM 150 GB 170 DL / 4
Bild / Fig. 4
Durchlaßkennlinie der Inversdiode (typisch) /
Forward characteristic of inverse diode (typical)
I
BSM 150 GB 170 DL / 6
Bild / Fig. 6
Schaltverluste (typisch) /
Switching losses (typical)
E
I
C
F
C
vj
on
= f(V
= f(V
= 150A, V
= 125°C
= f (R
0,5
F
CE
)
)
G
), E
0,5
CE
10
1,0
off
= 900V, T
= f (R
1,5
G
1,0
), E
j
20
= 125°C
Tj = 25°C
Tj = 125°C
2,0
rec
= f (R
2,5
G
1,5
)
BSM 150 GB 170 DL
30
3,0
V
2,0
GE
3,5
V
= 19V
GE
40
= 9V
4,0
V
V
R
CE
F
G
[V]
[ ]
2,5
[V]
Eon
Erec
4,5
Eoff
V
V
V
GE
GE
50
GE
= 11V
= 15V
= 13V
5,0
3,0