IXGF25N250 IXYS, IXGF25N250 Datasheet - Page 2

• Manufacturer Part Number: IXGF25N250
• Description: IGBT Transistors I4-Pak
• Manufacturer: IXYS

Specifications of IXGF25N250

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 2500 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: ISOPLUS I4-PAC-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 30
• Ic110, Tc=110°c, Igbt, (a): 15
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.9
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.1
• Package Style: ISOPLUS i4-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
R
Notes: 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
C(ON)
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCS
thJA
g
ge
gc
J
= 25°C, Unless Otherwise Specified)
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse Test, t < 300µs; Duty Cycle, d < 2%.
Test Conditions
I
V
V
I
Resistive Switching Times
I
V
C
C
C
CE
GE
CE
= 50A, V
= 50A, V
= 50A, V
= 1250V, R
= 15V, V
= 25V, V
GE
CE
GE
GE
CE
= 10V, Note 1
= 15V
= 15V, V
= 20V, Note 1
= 0V, f = 1MHz
G
4,835,592
4,881,106
= 5Ω
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
16
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2970
0.15
Typ.
240
233
209
200
26
98
36
75
15
30
68
30
1.10 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXGF25N250
7,005,734 B2
7,063,975 B2
TM
(HV) (IXGF) Outline
7,157,338B2