IXGF25N250 IXYS, IXGF25N250 Datasheet - Page 4

• Manufacturer Part Number: IXGF25N250
• Description: IGBT Transistors I4-Pak
• Manufacturer: IXYS

Specifications of IXGF25N250

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 2500 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: ISOPLUS I4-PAC-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 30
• Ic110, Tc=110°c, Igbt, (a): 15
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.9
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.1
• Package Style: ISOPLUS i4-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.00
1.00
0.10
0.01
280
240
200
160
120
36
33
30
27
24
21
18
15
12
9
6
3
0
80
40
0.0001
0
0
250
T
R
dV / dt < 10V / ns
20
J
G
500
= 125ºC
= 10Ω
Fig. 9. Reverse-Bias Safe Operating Area
40
750
T
J
= - 40ºC
60
Fig. 7. Transconductance
1000
25ºC
125ºC
I
80
C
V
- Amperes
0.001
CE
1250
- Volts
100
1500
120
1750
140
Fig. 11. Maximum Transient Thermal Impedance
2000
160
2250
0.01
180
Pulse Width - Seconds
2500
200
10000
1000
100
16
14
12
10
10
8
6
4
2
0
0
0
V
I
I
C
G
CE
f
= 50A
= 10 mA
= 1 MHz
= 1250V
0.1
10
5
20
10
Fig. 10. Capacitance
Fig. 8. Gate Charge
30
Q
15
G
- NanoCoulombs
V
CE
C oes
C ies
C res
40
20
- Volts
IXGF25N250
1
50
25
60
30
70
35
10
80
40