FZ1200R33KF2C Infineon Technologies, FZ1200R33KF2C Datasheet - Page 2

• Manufacturer Part Number: FZ1200R33KF2C
• Description: IGBT Transistors 3300V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R33KF2C

• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 3300 V
• Collector-emitter Saturation Voltage: 3.4 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 2000 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 14.5 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-9
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 190 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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preliminary data
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