SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 11

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

SGB07N120
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 4/27/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
11
Rev. 2_2
Apr 07