PZU12BA,115 NXP Semiconductors, PZU12BA,115 Datasheet - Page 5

DIODE ZENER 12V 320MW SOD-323

PZU12BA,115

Manufacturer Part Number
PZU12BA,115
Description
DIODE ZENER 12V 320MW SOD-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZU12BA,115

Voltage - Zener (nom) (vz)
12V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 9V
Tolerance
±5%
Power - Max
320mW
Impedance (max) (zzt)
10 Ohm
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Operating Temperature
-55°C ~ 150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062336115
NXP Semiconductors
Table 8.
T
[1]
[2]
PZUXBA_SER_1
Product data sheet
PZUxBA Sel
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
j
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
= 100 s; square wave; T
B
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG
R
= 0 V
Working
voltage
V
I
Min
2.3
2.5
2.5
2.65
2.8
2.8
2.95
3.1
3.1
3.25
3.4
3.4
3.55
3.7
3.7
3.87
4.01
4.01
4.15
4.28
4.42
4.42
4.55
4.69
4.84
4.84
4.98
5.14
5.31
5.31
5.49
5.67
Z
Z
= 5 mA
(V)
Max
2.6
2.9
2.75
2.9
3.2
3.05
3.2
3.5
3.35
3.5
3.8
3.65
3.8
4.1
3.97
4.10
4.48
4.21
4.34
4.48
4.9
4.61
4.75
4.9
5.37
5.04
5.2
5.37
5.92
5.55
5.73
5.92
j
= 25 C prior to surge
Differential resistance
r
I
Max
1000
1000
1000
1000
1000
1000
1000
800
250
100
Z
dif
= 0.5 mA I
( )
Rev. 01 — 19 September 2008
Max
100
100
95
95
90
90
90
80
60
40
Z
= 5 mA
Reverse
current
I
Max
50
20
10
5
5
3
3
2
2
1
R
( A)
V
1
1
1
1
1
1
1
1
1.5
2.5
R
(V)
Temperature
coefficient
S
I
Typ
0.3
1.9
Z
1.6
2.0
2.1
2.4
2.4
2.5
2.5
1.4
Z
= 5 mA
(mV/K)
PZUxBA series
Diode
capacitance
C
Max
450
440
425
410
390
370
350
325
300
275
d
(pF)
[1]
Single Zener diodes
© NXP B.V. 2008. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
8
8
8
8
8
8
8
8
5.5
5.5
ZSM
(A)
[2]
5 of 14

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