PZU15B2L,315 NXP Semiconductors, PZU15B2L,315 Datasheet - Page 4

• Manufacturer Part Number: PZU15B2L,315
• Description: DIODE ZENER 15V 250MW SOD-882
• Manufacturer: NXP Semiconductors

Specifications of PZU15B2L,315

• Voltage - Zener (nom) (vz): 15V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 50nA @ 11V
• Tolerance: ±2%
• Power - Max: 250mW
• Impedance (max) (zzt): 15 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Operating Temperature: -55°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061614315

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 8.
T
PZUXDB2_SER_1
Product data sheet
PZUxDB2
PZUxDB2/DG
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
j
= 25 C unless otherwise specified.
Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
Working
voltage
V
I
Min
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
Z
Z
= 5 mA
(V)
Table 6.
[1]
[2]
[3]
Table 7.
T
[1]
Symbol
Per device
R
R
Symbol
Per diode
V
Max
2.9
3.2
3.5
3.8
4.1
4.34
4.75
5.2
5.73
6.33
6.93
7.6
j
F
th(j-a)
th(j-sp)
= 25 C unless otherwise specified.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering points at pin 4 and pin 5.
Pulse test: t
Differential resistance
r
I
Max
1000
1000
1000
1000
1000
1000
800
250
100
80
60
60
Z
dif
= 0.5 mA I
Thermal characteristics
Characteristics
( )
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
forward voltage
p
300 s;
Max
100
95
95
90
90
90
80
60
40
30
20
10
Z
Rev. 01 — 31 March 2008
= 5 mA
0.02.
Reverse
current
I
Max
20
10
5
5
3
3
2
2
1
0.5
0.5
0.5
R
( A)
V
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
Conditions
in free air
Conditions
I
I
R
F
F
= 10 mA
= 100 mA
(V) Typ
Temperature
coefficient
S
I
0.3
1.9
2.7
3.4
4.0
Z
2.0
2.1
2.4
2.4
2.5
2.5
1.4
Z
= 5 mA
(mV/K)
PZUxDB2 series
[1]
[2]
[3]
[1]
Diode
capacitance
C
Max
440
425
410
390
370
350
325
300
275
250
215
170
Min
-
-
-
Min
-
-
d
(pF)
[1]
Typ
-
-
-
Typ
-
-
Dual Zener diodes
© NXP B.V. 2008. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
8
8
8
8
8
8
8
5.5
5.5
5.5
5.5
3.5
ZSM
Max
500
455
200
Max
0.9
1.1
(A)
2
[2]
Unit
K/W
K/W
K/W
.
Unit
V
V
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