PDZ27B,115 NXP Semiconductors, PDZ27B,115 Datasheet - Page 5

• Manufacturer Part Number: PDZ27B,115
• Description: DIODE ZENER 27V 400MW SOD323
• Manufacturer: NXP Semiconductors

Specifications of PDZ27B,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Zener (nom) (vz): 27V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 50nA @ 21V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (max) (zzt): 40 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 26.86 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 23.4 mV / K
• Zener Current: 200 mA
• Power Dissipation: 400 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 40 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054869115; PDZ27B T/R; PDZ27B T/R

Table 2 Per type
T
NUMBER
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
j
= 25 °C unless otherwise specified.
TYPE
WORKING VOLTAGE
10.78
12.91
14.34
15.85
17.56
19.52
21.54
23.72
26.19
29.19
32.15
35.07
11.74
MIN.
2.43
2.69
2.85
3.32
3.60
3.89
4.17
4.55
4.96
5.48
6.06
6.65
7.28
8.02
8.85
9.77
at I
V
Z
Z
= 5 mA
(V)
MAX.
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
27.53
30.69
33.79
36.87
2.63
2.91
3.07
3.53
3.85
4.16
4.48
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
MAX.
1 000
1 000
1 000
1 000
500
500
600
600
250
100
100
100
120
150
200
250
300
80
60
60
60
60
60
60
80
80
80
80
80
DIFFERENTIAL RESISTANCE
(mA)
at I
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
r
dif
(Ω)
MAX.
100
100
95
95
90
90
90
90
60
50
50
40
10
10
10
10
10
10
10
15
20
20
20
25
30
40
40
40
60
(mA)
at I
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Z
(see Figs 4 and 5)
TEMP. COEFF.
at I
S
Z
Z
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
12.4
14.4
16.4
18.4
20.4
23.4
26.6
29.7
33.0
(mV/K)
11.4
0.3
1.9
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
= 5 mA
DIODE CAP.
f = 1 MHz;
C
d
V
MAX.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
108
105
103
(pF) at
R
110
99
97
93
88
84
80
73
66
60
59
= 0
NON-REPETITIVE PEAK
I
REVERSE CURRENT
ZSM
(A) at t
T
amb
MAX.
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
5.5
5.5
5.5
5.5
3.5
3.5
3.5
3.5
3.0
3.0
2.5
2.0
1.5
1.5
1.5
1.3
1.3
1.0
1.0
0.9
0.8
= 25 °C
p
= 100 μs;