PZU12B2A,115 NXP Semiconductors, PZU12B2A,115 Datasheet - Page 4

• Manufacturer Part Number: PZU12B2A,115
• Description: DIODE ZENER 12V 320MW SOD-323
• Manufacturer: NXP Semiconductors

Specifications of PZU12B2A,115

• Voltage - Zener (nom) (vz): 12V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Tolerance: ±2%
• Power - Max: 320mW
• Impedance (max) (zzt): 10 Ohm
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Operating Temperature: -55°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062338115

NXP Semiconductors
Table 8.
T
[1]
[2]
PZUXB_SER_2
Product data sheet
PZU
xxx
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
j
= 25
f = 1 MHz; V
t
p
= 100 μs; square wave; T
°
Sel Working
B
B
B1 2.5
B2 2.65
B
B1 2.80
B2 2.95
B
B1 3.10
B2 3.25
B
B1 3.40
B2 3.55
B
B1 3.70
B2 3.87
B
B1 4.01
B2 4.15
B3 4.28
B
B1 4.42
B2 4.55
B3 4.69
B
B1 4.84
B2 4.98
B3 5.14
B
B1 5.31
B2 5.49
B3 5.67
C unless otherwise specified
Characteristics per type; PZU2.4B to PZU5.6B3
voltage
V
I
Min
2.3
2.5
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
Z
Z
= 5 mA
R
(V);
= 0 V
Max
2.6
2.9
2.75
2.9
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
j
Maximum differential
resistance
r
I
1000
1000
1000
1000
1000
1000
1000
800
250
100
Z
= 25 °C prior to surge
dif
= 0.5 mA I
(Ω)
100
100
95
95
90
90
90
80
60
40
Z
= 5 mA
Rev. 02 — 15 November 2009
50
20
10
5
5
3
3
2
Reverse
current
I
Max
2
1
R
(μA)
V
1
1
1
1
1
1
1
1
1.5
2.5
R
(V) Typ
Temperature
coefficient
S
I
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
Z
Single Zener diodes in a SOD323F package
Z
= 5 mA
(mV/K);
450
440
425
410
390
370
350
325
300
275
Diode
capacitance
C
Max
d
(pF)
PZUxB series
[1]
Non-repetitive peak
reverse current
I
Max
8
8
8
8
8
8
8
8
5.5
5.5
ZSM
© NXP B.V. 2009. All rights reserved.
(A)
[2]
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