ADV3222ARZ-RL Analog Devices Inc, ADV3222ARZ-RL Datasheet - Page 6

• Manufacturer Part Number: ADV3222ARZ-RL
• Description: 4:1 Muxes W/Double Buffered Logic Gain+2
• Manufacturer: Analog Devices Inc

Specifications of ADV3222ARZ-RL

• Function: Multiplexer
• Circuit: 1 x 4:1
• Voltage Supply Source: Dual Supply
• Voltage - Supply, Single/dual (±): ±5V
• Current - Supply: 1.8mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADV3221/ADV3222
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage (V+ − V−)
Analog Input Voltage
Digital Input Voltage
Output Voltage (Disabled Output)
Output Short-Circuit Duration
Output Short-Circuit Current
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
soldered in a circuit board for surface-mount packages.
Table 5. Thermal Resistance
Package Type
16-Lead Narrow-Body SOIC
JA
is specified for the worst-case conditions, that is, a device
θ
81
JA
Rating
12 V
V− to V+
0 V to V+
(V+ − 1 V) to (V− + 1 V)
Momentary
50 mA
−65°C to +150°C
−40°C to +85°C
300°C
150°C
θ
43
JC
Unit
°C/W
Rev. 0 | Page 6 of 20
POWER DISSIPATION
The ADV3221/ADV3222 are operated with ±5 V supplies and
can drive loads down to 150 Ω, resulting in a wide range of
possible power dissipations. For this reason, extra care must
be taken to adjust the operating conditions based on ambient
temperature.
Packaged in a 16-lead narrow-body SOIC, the ADV3221 and
ADV3222 junction-to-ambient thermal impedance (θ
For long-term reliability, the maximum allowed junction tempera-
ture of the die, T
this limit may cause a shift in parametric performance due to a
change in stresses exerted on the die by the package. Figure 4
shows the range of the allowed internal die power dissipations
that meet these conditions over the −40°C to +85°C ambient
temperature range. When using Figure 4, do not include the
external load power in the maximum power calculation, but
do include the load current through the die output transistors.
ESD CAUTION
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
1.50
1.25
1.00
0.75
0.50
15
J
25
, should not exceed 125°C. Temporarily exceeding
AMBIENT TEMPERATURE (°C)
35
45
55
65
T
J
75
= 125°C
JA
) is 81°C/W.
85