AM29LV065DU90REF Spansion Inc., AM29LV065DU90REF Datasheet - Page 52

• Manufacturer Part Number: AM29LV065DU90REF
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29LV065DU90REF

• Memory Size: 64Mbit
• Memory Configuration: 8M X 8
• Ic Interface Type: Parallel
• Access Time: 90ns
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Termination Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

REVISION SUMMARY
Revision A (July 27, 2000)
Initial release.
Revision A+1 (August 4, 2000)
Global
Deleted references to the 48-pin reverse TSOP.
Connection Diagrams
Corrected pin 36 on TSOP package to V
Accelerated Program Operation, Unlock Bypass
Command Sequence
Modified caution note regarding ACC input.
Revision A+2 (August 14, 2000)
Ordering Information
Corrected 90 ns entry in V
Revision A+3 (August 25, 2000)
Table
(High Voltage Method)
Corrected the SecSI Sector Indicator Bit codes from
80h/00h to 90h/10h.
Revision A+4 (October 19, 2000)
Global
Changed data sheet status to “Preliminary.”
Revision A+5 (November 7, 2000)
Ordering Information
Deleted burn-in option.
Revision A+6 (November 27, 2000)
Pin Description, and
Status
Deleted references to RY/BY# being available only on
the FBGA package. RY/BY# is also available on the
TSOP package.
Revision A+7 (March 8, 2001)
Global
Deleted “Preliminary” status from document.
Table
Address Table
Corrected the sector group address bits for sectors
64–127.
52
3, Am29LV065D Autoselect Codes,
4, Sector Group Protection/Unprotection
Table
IO
column for FBGA.
11, Write Operation
IO
.
Am29LV065D
Revision B (January 10, 2002)
Global
Added TSR048 package. Clarified description of Ver-
satileIO (V
Characteristics; General Description; VersatileIO (V
Control; Operating Ranges; DC Characteristics;
CMOS compatible.
Reduced typical sector erase time from 1.6 s to 0.9 s.
Table
(High Voltage Method)
Corrected the autoselect code for sector protection
verification.
Sector Group Protection and Unprotection
Deleted reference to previous method of sector protec-
tion and unprotection.
Autoselect Command Sequence
Clarified description of function.
SecSi (Secured Silicon) Sector Flash
Memory Region
Clarified the customer lockable version of this device
can be programmed and protected only once. In
5, changed address range in second row.
DC Characteristics
Changed minimum V
leted reference to Note 6 for both V
Erase and Program Operations table
Corrected to indicate t
value.
Erase and Program Performance table
Changed typical sector erase time from 1.6 s to 0.9 s
and typical chip erase time from 205 s to 115 s.
Revision C (March 26, 2004)
SecSi (Secured Silicon) Sector Flash
Memory Region
Modified SecSi Sector protect verify section. Added
algorithm shown in
Common Flash Memory Interface
Modified website for CFI specifications and publica-
tions.
Command Definitions
Modified end of first paragraph to “Writing incorrect
address and data values or writing them in the im-
proper sequence may place the device in an unknown
state. A reset command is required to return the de-
vice to reading array data.”
3, Am29LV065D Autoselect Codes,
IO
) in the following sections: Distinctive
Figure
OH1
BUSY
from 0.85V
3.
specification is a maximum
OH1
February 16, 2006
IO
and V
to 0.8V
OH2
IO
.
Table
. De-
IO
)