AM29LV641DH120REF Spansion Inc., AM29LV641DH120REF Datasheet - Page 26

Flash Memory IC

AM29LV641DH120REF

Manufacturer Part Number
AM29LV641DH120REF
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29LV641DH120REF

Memory Size
64Mbit
Memory Configuration
4M X 16
Ic Interface Type
Parallel
Access Time
120ns
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Termination Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase op-
eration, or if the device is in the autoselect mode. See
the next section,
tion.
See also
page 10
more information. The
page 37
ure 13, on page 37
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 10 on page 28
quirements. This method is an alternative to that
shown in
PROM programmers and requires V
A9. The autoselect command sequence may be writ-
ten to an address that is either in the read or
erase-suspend-read mode. The autoselect command
cannot be written while the device is actively program-
ming or erasing.
24
table provides the read parameters, and
in the
“Requirements for Reading Array Data” on
Table 3 on page
Device Bus Operations
Reset
shows the timing diagram.
shows the address and data re-
Command, for more informa-
“Read-Only Operations” on
16, which is intended for
ID
on address pin
section for
Am29LV640D/Am29LV641D
D A T A
Fig-
S H E E T
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
■ A read cycle at address XX00h returns the manu-
■ A read cycle at address XX01h returns the device
■ A read cycle to an address containing a sector
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word random Electronic Serial Num-
ber (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the de-
vice to normal operation.
the address and data requirements for both command
sequences. See also
Flash Memory Region” on page 20
tion.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. The
on page 28
for the word program command sequence.
When the Embedded Program algorithm is complete,
the device returns to the read mode and addresses
are no longer latched. The system determines the sta-
tus of the program operation by using DQ7, DQ6, or
RY/BY#. Refer to
for information on these status bits.
facturer code.
code.
group address (SA), and the address 02h on A7–A0
returns 01h if the sector group is protected, or 00h
if it is unprotected. (Refer to
valid sector addresses).
shows the address and data requirements
“Write Operation Status” on page 29
“SecSi (Secured Silicon) Sector
Table 10 on page 28
22366C6 January 22, 2007
“Command Definitions”
Table 4 on page 17
for further informa-
shows
for

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