AM29LV641DH120REI Spansion Inc., AM29LV641DH120REI Datasheet - Page 50

• Manufacturer Part Number: AM29LV641DH120REI
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29LV641DH120REI

• Memory Configuration: 4M X 16
• Ic Interface Type: Parallel
• Access Time: 120ns
• Memory Case Style: TSOP
• No. Of Pins: 48
• Mounting Type: Surface Mount
• Peak Reflow Compatible (260 C): No
• Supply Voltage: 3V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
48
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Word Program Time
Chip Program Time
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
10
Parameter
Current
Symbol
for further information on command definitions.
C
C
C
OUT
IN2
IN
A
(Note
= 25°C, f = 1.0 MHz.
3)
Description
Control Pin Capacitance
Parameter Description
SS
SS
CC
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 3.0 V, 1,000,000 cycles.
Am29LV640D/Am29LV641D
D A T A
Typ
CC
= 3.0 V, one pin at a time.
(Note
115
0.9
11
48
7
1)
S H E E T
Max
300
210
144
(Note
15
Test Setup
V
V
V
OUT
Test Conditions
IN
IN
2)
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure
Excludes system level
22366C6 January 22, 2007
Typ
overhead
8.5
7.5
6
Comments
V
+100 mA
CC
12.5 V
Min
Max
10
20
Max
+ 1.0 V
7.5
12
(Note
9
(Note
5)
Years
Years
Unit
Unit
Table
pF
pF
pF
4)