AM29LV800DT-90ED Spansion Inc., AM29LV800DT-90ED Datasheet - Page 11

• Manufacturer Part Number: AM29LV800DT-90ED
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.
• Series: AM29r

Specifications of AM29LV800DT-90ED

• Memory Size: 8Mbit
• Package/case: 48-TSOP
• Supply Voltage Max: 3V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Access Time, Tacc: 90nS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
Legend:
L = Logic Low = V
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = V
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and con-
trolled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
Am29LV800D_00_A6 May 5, 2006
Read
Write
Standby
Output Disable
Reset
Sector Protect (Note 2)
Sector Unprotect (Note 2)
Temporary Sector Unprotect
Protection/Unprotection” section.
Operation
IL
, H = Logic High = V
IH
. The BYTE# pin determines
V
0.3 V
Table 1. Am29LV800D Device Bus Operations
CE#
CC
X
X
L
L
L
L
L
IL
. CE# is the power
±
IH
, V
OE# WE# RESET#
ID
H
X
H
X
H
H
X
L
= 12.0 ± 0.5 V, X = Don’t Care, A
D A T A
H
H
L
X
X
L
L
X
IH
), A18:A-1 in byte mode (BYTE# = V
Am29LV800D
V
0.3 V
V
V
V
CC
H
H
H
L
ID
ID
ID
±
S H E E T
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Sector Address,
Sector Address,
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer
to the AC
tions and to Figure 13 for the timing diagram. I
the DC Characteristics table represents the active cur-
rent specification for reading array data.
A6 = H, A1 = H,
A6 = L, A1 = H,
Addresses
(Note 1)
A0 = L
A0 = L
A
A
A
X
X
X
IN
IN
IN
Read Operations
IN
= Address In, D
High-Z
High-Z
High-Z
DQ0–
D
DQ7
D
D
D
D
OUT
IN
IN
IN
IN
IL
).
BYTE#
High-Z
High-Z
High-Z
= V
D
IN
D
D
OUT
X
X
table for timing specifica-
IN
IN
= Data In, D
IH
DQ8–DQ14 = High-Z,
DQ8–DQ15
DQ15 = A-1
OUT
BYTE#
High-Z
High-Z
High-Z
High-Z
= V
X
X
= Data Out
IL
CC1
in
9