CY62128EV30LL-45ZXIT Cypress Semiconductor Corp, CY62128EV30LL-45ZXIT Datasheet - Page 4

• Manufacturer Part Number: CY62128EV30LL-45ZXIT
• Description: CY62128EV30LL-45ZXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62128EV30LL-45ZXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP I
• Density: 1Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 17b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 16mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................–0.3 V to V
DC voltage applied to outputs
in high Z State
Electrical Characteristics
Over the Operating Range
Notes
Document #: 38-05579 Rev. *J
V
V
V
V
I
I
I
I
I
3. V
4. V
5. Full device AC operation assumes a 100 µs ramp time from 0 to V
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
7. Chip enables (CE
IX
OZ
CC
SB1
SB2
Parameter
OH
OL
IH
IL
[7]
[7]
IL(min)
IH(max)
= –2.0 V for pulse durations less than 20 ns.
= V
CC
[3, 4]
+ 0.75 V for pulse durations less than 20 ns.
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
Automatic CE
power-down
current — CMOS inputs
Automatic CE
power-down
current — CMOS inputs
CC
1
and CE
......................–0.3 V to V
operating supply current
2
) must be at CMOS level to meet the I
Description
CC(max)
CC(max)
I
I
I
I
V
V
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = f
f = 0 (OE and WE), V
CE
V
f = 0, V
OH
OH
OL
OL
CC
CC
CC
CC
IN
IN
1
1
+ 0.3 V
+ 0.3 V
= 0.1 mA
= 2.1 mA, V
max
> V
max
= –0.1 mA
= –1.0 mA, V
> V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.2 V to 2.7 V
= 2.2 V to 2.7 V
> V
> V
SB1
CC(min)
CC
CC
CC
= 1/t
(address and data only),
CC
CC
/ I
I
O
< V
SB2
Test Conditions
= 3.60 V
< V
– 0.2 V, V
– 0.2 V or V
0.2 V, CE
and 200 µs wait time after V
– 0.2 V, CE
RC
CC
/ I
CC
CCDR
CC
, output disabled
CC
DC input voltage
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................. > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
> 2.70 V
CY62128EV30LL Industrial –40 °C to +85 °C 2.2 V to 3.6 V
V
I
CMOS levels
spec. Other inputs can be left floating.
OUT
> 2.70 V
CC
IN
CC
< 0.2 V
IN
2
2
= V
= 0 mA
Device
< 0.2 V
= 3.60 V
< 0.2 V
< 0.2 V,
CCmax
CC
stabilization.
[3, 4]
Range
...................–0.3 V to V
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–1
–1
CC
–
–
–
–
–
–
= V
CY62128EV30 MoBL
45 ns (Industrial)
CC(typ)
Temperature
, T
Typ
Ambient
A
1.3
11
–
–
–
–
–
–
–
–
–
–
1
1
= 25 °C.
[6]
V
V
CC(max)
CC
CC
Max
0.4
0.4
0.6
0.8
2.0
+1
+1
16
+ 0.3 V
+ 0.3 V
–
–
4
4
Page 4 of 18
V
+ 0.3 V
CC
[5]
Unit
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
®
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