CY7C09579V-100BBC Cypress Semiconductor Corp, CY7C09579V-100BBC Datasheet - Page 13

• Manufacturer Part Number: CY7C09579V-100BBC
• Description: IC,SYNC SRAM,32KX36,CMOS,BGA,172PIN,PLASTIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C09579V-100BBC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 1.152M (32K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 172-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Switching Waveforms
Pipelined Read-to-Write-to-Read (OE = V
Notes
Document Number: 38-06054 Rev. *E
27. Addresses do not have to be accessed sequentially since ADS = V
28. Output state (HIGH, LOW, or High-Impedance) is determined by the previous cycle control signals.
29. CE = ADS = CNTEN = V
30. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
Data
Address
Data
CLK
R/W
OUT
CE
IN
t
t
t
SW
SC
SA
A
IL
t
n
; CNTRST = V
CH2
t
CYC2
t
t
t
HW
HC
HA
(continued)
t
CL2
IH
.
A
Read
n+1
t
CD2
IL
t
SW
)
[27, 28, 29, 30]
Q
n
IL
constantly loads the address on the rising edge of the CLK. Numbers are for reference only.
A
n+2
t
CKHZ
No Operation
t
HW
t
SD
A
D
n+2
n+2
t
HD
Write
A
n+3
t
CKLZ
Read
CY7C09569V
CY7C09579V
A
n+4
t
CD2
Page 13 of 32
Q
n+3
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