CY7C1021DV33-10VXIT Cypress Semiconductor Corp, CY7C1021DV33-10VXIT Datasheet - Page 3
CY7C1021DV33-10VXIT
Manufacturer Part Number
CY7C1021DV33-10VXIT
Description
CY7C1021DV33-10VXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1021DV33-10VXI.pdf
(13 pages)
Specifications of CY7C1021DV33-10VXIT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05460 Rev. *F
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
DC Electrical Characteristics
Capacitance
Thermal Resistance
Notes
Parameter
V
V
V
V
I
I
I
I
I
C
C
4. V
5. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
JA
JC
Parameter
Parameter
IL
(min.) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Supply Current
Automatic CE Power-Down
Current —TTL Inputs
Automatic CE Power-Down
Current —CMOS Inputs
CC
[4]
[5]
[4]
......................................–0.3V to V
Operating
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
...................................–0.3V to V
Description
CC
IH
(max) = V
to Relative GND
Description
Description
[5]
CC
[4]
+ 1V for pulse durations of less than 5 ns.
Over the Operating Range
[4]
V
V
GND < V
GND < V
V
I
f = f
Max. V
V
Max. V
V
OUT
CC
CC
CC
IN
IN
.... –0.3V to +4.6V
MAX
> V
> V
= Min., I
= Min., I
= Max.,
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
= 0 mA,
A
CC
CC
CC
IH
= 25C, f = 1 MHz, V
= 1/t
Test Conditions
I
I
, CE > V
, CE > V
or V
– 0.3V or V
< V
< V
CC
CC
OH
OL
RC
CC
CC
IN
+0.3V
+0.3V
= 8.0 mA
, Output Disabled
= –4.0 mA
< V
IH
CC
Test Conditions
Test Conditions
IL
IN
, f = f
– 0.3V,
< 0.3V, f = 0
100 MHz
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Automotive-A
Automotive-E –40 C to +125 C
83 MHz
66 MHz
40 MHz
MAX
CC
Industrial
= 3.3V
Range
–10 (Ind’l/Auto-A)
Min.
0.3
2.4
2.0
1
1
–40 C to +85 C
–40 C to +85 C
Temperature
Ambient
V
CC
Max.
0.4
0.8
+1
+1
60
55
45
30
10
3
+ 0.3
59.52
36.75
SOJ
Max.
CY7C1021DV33
8
8
TSOP II VFBGA
Min.
0.3
53.91
21.24
2.4
2.0
5
5
–12 (Auto-E)
3.3V 0.3V
V
CC
V
CC
36
Max.
9
100
0.4
0.8
+5
+5
Page 3 of 13
90
60
50
15
-
+ 0.3
Unit
pF
pF
Speed
10 ns
10 ns
12 ns
C/W
C/W
Unit
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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