CY7C1021DV33-10VXIT Cypress Semiconductor Corp, CY7C1021DV33-10VXIT Datasheet - Page 6

• Manufacturer Part Number: CY7C1021DV33-10VXIT
• Description: CY7C1021DV33-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021DV33-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05460 Rev. *F
Data Retention Waveform
Data Retention Characteristics
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
Read Cycle No. 2 (OE Controlled)
Notes
V
I
t
t
13. Full device operation requires linear V
14. Device is continuously selected. OE, CE, BHE and/or BLE = V
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
Parameter
DATA OUT
CCDR
CDR
R
ADDRESS
CURRENT
DR
[13]
BHE, BLE
DATA OUT
ADDRESS
SUPPLY
[5]
V
V
OE
CE
CC
CE
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
Description
t
t
LZCE
PU
CC
ramp from V
[15, 16]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
Over the Operating Range
t
50%
OHA
t
CDR
3.0V
DR
to V
IL
t
CC(min.)
AA
.
V
V
[14, 15]
CC
IN
> V
= V
> 50 s or stable at V
t
RC
CC
DR
DATA RETENTION MODE
= 2.0V, CE > V
– 0.3V or V
t
RC
RC
V
DR
>
Conditions
CC(min.)
2V
IN
DATA VALID
< 0.3V
CC
> 50 s.
– 0.3V,
Industrial
Automotive
t
HZOE
DATA VALID
3.0V
t
R
t
t
CY7C1021DV33
HZCE
HZBE
t
PD
Min.
t
RC
2
0
50%
IMPEDANCE
Max.
HIGH
15
3
Page 6 of 13
Unit
mA
mA
ns
ns
V
I
I
CC
SB
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