CY7C1315BV18-250BZXC Cypress Semiconductor Corp, CY7C1315BV18-250BZXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1315BV18-250BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... – 65 C to +150 C
Ambient Temperature with Power Applied – 55 C to +125 C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 38-05620 Rev. *F
V
V
V
V
V
V
V
V
I
I
V
I
17. Power up: Assumes a linear ramp from 0V to V
18. Output are impedance controlled. I
19. Output are impedance controlled. I
20. V
21. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[21]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[13]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[14]
, whichever is larger, V
OH
OL
= (V
=

(V
DDQ
DDQ
[20]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
(min) within 200 ms. During this time V
Note 18
Note 19
I
I
GND  V
GND  V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
REF
= 0.1 mA, Nominal Impedance
=0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
DDQ
(max) = 0.95V or 0.54V
DD
= 1/t
I
I
+ 0.3V
+ 0.3V
 V
 V
Test Conditions
CYC
DDQ
DDQ,
DD
Output Disabled
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
DDQ
Commercial
Industrial
300 MHz
278 MHz
250 MHz
, whichever is smaller.
IH
Range
< V
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
DD
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
–40°C to +85°C
V
V
0 C to +70 C
< V
DDQ
DDQ
V
V
Ambient
DDQ
REF
DD
–0.3
0.68
Min
V
.
1.7
1.4
/2 – 0.12
/2 – 0.12
5
5
SS
+ 0.1
– 0.2
A
)
0.75
Typ
1.8
1.5
1.8 ± 0.1V 1.4V to V
V
DD
V
V
DDQ
DDQ
V
V
[17]
DDQ
REF
V
Max
0.95
V
765
800
840
985
720
730
760
910
665
675
705
830
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 22 of 32
V
DDQ
Unit
[17]
mA
mA
mA
A
A
V
V
V
V
V
V
V
V
V
DD
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