CY7C1347G-200AXC Cypress Semiconductor Corp, CY7C1347G-200AXC Datasheet

SRAM (Static RAM)

CY7C1347G-200AXC

Manufacturer Part Number
CY7C1347G-200AXC
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheets

Specifications of CY7C1347G-200AXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4.5M (128K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Density
4.5Mb
Access Time (max)
2.8ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
200MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
4
Supply Current
265mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-2115
CY7C1347G-200AXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1347G-200AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1347G-200AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY7C1347G-200AXC
Quantity:
360
Part Number:
CY7C1347G-200AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
4-Mbit (128 K × 36) Pipelined Sync SRAM
Features
Selection Guide
Note
Cypress Semiconductor Corporation
Document #: 38-05516 Rev. *I
Maximum access time
Maximum operating current
Maximum CMOS standby current
1. For best practice recommendations, refer to the Cypress application note,
Fully registered inputs and outputs for pipelined operation
128 K × 36 common I/O architecture
3.3 V core power supply (V
2.5- / 3.3-V I/O power supply (V
Fast clock to output times: 2.6 ns (for 250 MHz device)
User selectable burst counter supporting Intel Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed writes
Asynchronous output enable
Offered in Pb-free 100-pin TQFP, Pb-free and non Pb-free
119-ball BGA package, and 165-ball FBGA package
“ZZ” sleep mode option and stop clock option
Available in Industrial and commercial temperature ranges
Description
DD
)
DDQ
)
250 MHz
4-Mbit (128 K × 36) Pipelined Sync SRAM
198 Champion Court
325
2.6
40
SRAM System Guidelines
200 MHz
265
Functional Description
The CY7C1347G
SRAM designed to support zero-wait-state secondary cache
with minimal glue logic. CY7C1347G I/O pins can operate at
either the 2.5 V or the 3.3 V level. The I/O pins are 3.3 V tolerant
when V
registers controlled by the rising edge of the clock. All data
outputs pass through output registers controlled by the rising
edge of the clock. Maximum access delay from the clock rise is
2.6 ns (250 MHz device). CY7C1347G supports either the
interleaved burst sequence used by the Intel Pentium processor
or a linear burst sequence used by processors such as the
PowerPC. The burst sequence is selected through the MODE
pin. Accesses can be initiated by asserting either the address
strobe from processor (ADSP) or the address strobe from
controller (ADSC) at clock rise. Address advancement through
the burst sequence is controlled by the ADV input. A 2-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the rest
of the burst access.
Byte write operations are qualified with the four Byte Write Select
(BW
write inputs and writes data to all four bytes. All writes are
conducted with on-chip synchronous self timed write circuitry.
Three synchronous chip Selects (CE
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To provide proper data
during depth expansion, OE is masked during the first clock of a
read cycle when emerging from a deselected state.
2.8
40
[A:D]
DDQ
) inputs. A global write enable (GW) overrides all byte
San Jose
= 2.5 V. All synchronous inputs pass through input
AN1064.
[1]
166 MHz
is a 3.3 V, 128 K × 36 synchronous pipelined
240
3.5
40
,
CA 95134-1709
133 MHz
Revised March 29, 2011
225
4.0
1
40
, CE
CY7C1347G
2
, CE
408-943-2600
3
) and an
Unit
mA
mA
ns
[+] Feedback

Related parts for CY7C1347G-200AXC

CY7C1347G-200AXC Summary of contents

Page 1

... K × 36) Pipelined Sync SRAM Functional Description The CY7C1347G SRAM designed to support zero-wait-state secondary cache with minimal glue logic. CY7C1347G I/O pins can operate at either the 2 the 3.3 V level. The I/O pins are 3.3 V tolerant when V = 2.5 V. All synchronous inputs pass through input DDQ registers controlled by the rising edge of the clock ...

Page 2

... BURST COUNTER AND CLR Q0 LOGIC DQ ,DQP D D BYTE WRITE DRIVER BYTE WRITE DRIVER MEMORY ARRAY BYTE WRITE DRIVER DQ DQP BYTE WRITE DRIVER PIPELINED ENABLE CY7C1347G OUTPUT OUTPUT DQs SENSE BUFFERS REGISTERS AMPS DQP A E DQP B DQP C DQP D INPUT REGISTERS Page [+] Feedback ...

Page 3

... Document #: 38-05516 Rev. *I Neutron Soft Error Immunity ......................................... 11 Electrical Characteristics ............................................... 11 Capacitance .................................................................... 13 Thermal Resistance ........................................................ 13 Switching Characteristics .............................................. 14 Switching Waveforms .................................................... 15 Ordering Information ...................................................... 19 Ordering Code Definitions ......................................... 19 Package Diagrams .......................................................... 20 Acronyms ........................................................................ 22 Document History Page ................................................. 23 Sales, Solutions, and Legal Information ...................... 24 Worldwide Sales and Design Support ....................... 24 Products .................................................................... 24 PSoC Solutions ......................................................... 24 CY7C1347G Page [+] Feedback ...

Page 4

... DDQ V 5 SSQ BYTE SSQ V 11 DDQ DDQ V 21 SSQ BYTE SSQ V 27 DDQ DQP 30 D Document #: 38-05516 Rev. *I Figure 1. 100-pin TQFP Pinout CY7C1347G CY7C1347G 80 DQP DDQ 76 V SSQ BYTE SSQ V 70 DDQ DDQ 60 V SSQ BYTE SSQ 54 V DDQ DQ 53 ...

Page 5

... BWE DQP MODE NC/72M Figure 3. 165-ball FBGA Pinout BWE CLK NC/18M CY7C1347G DDQ CE NC/576 NC/1G DQP DDQ DDQ DDQ DQP NC/36M DDQ ADSC ADV NC/576 M OE ADSP V V NC/1G DQP SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DQP V SS ...

Page 6

... Mode pin has an internal pull-up. Document #: 38-05516 Rev. *I Description feeds the 2-bit counter. to select or deselect the device. ADSP is ignored select or deselect the device select or deselect the device deasserted HIGH. 1 CY7C1347G , CE , and CE are sampled active and BWE). [A:D] is HIGH sampled 1 ...

Page 7

... A synchronous self timed write mechanism has been provided to simplify the write operations. Because the CY7C1347G is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs and DQPs inputs. Doing so tristates the output ...

Page 8

... As a safety precaution, DQs and DQPs are automatically tristated whenever a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1347G provides a two-bit wraparound counter, fed that implements either an interleaved or linear burst [1:0] sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence ...

Page 9

... Truth Table (continued) The truth table for part number CY7C1347G follow. Add. Next Cycle Used Snooze mode, power-down None Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Begin Burst External Read Cycle, Begin Burst ...

Page 10

... Partial Truth Table for Read/Write The partial truth table for read/write for part number CY7C1347G follow. Function Read Read Write byte A – Write byte B – Write bytes B, A Write byte C – Write bytes C, A Write bytes C, B Write bytes Write byte D – DQ ...

Page 11

... DDQ  V output disabled I DDQ, /2). Undershoot: V (AC) > –2 V (pulse width less than t CYC IL (min) within 200 ms. During this time V < V and CY7C1347G Test Typ Max* Unit Conditions Logical 25 °C 361 394 single-bit upsets Logical 25 °C 0 0.01 multi-bit upsets Single event 85 ° ...

Page 12

... DD < 0 > V – 0 DDQ 5 ns cycle, 200 MHz = 1/t MAX CYC 6 ns cycle, 166 MHz 7.5 ns cycle, 133 MHz , device deselected, DD  V  CY7C1347G Min Max Unit – 325 mA – 265 mA – 240 mA – 225 mA – 120 mA – 110 mA – 100 mA – ...

Page 13

... V V OUTPUT DDQ GND 351  Including JIG and (b) scope R = 1667  2 DDQ OUTPUT GND 1538  Including JIG and scope (b) CY7C1347G 119-ball BGA 165-ball FBGA Max Max 119-ball BGA 165-ball FBGA Package Package 34.1 20.3 14.0 4.6 All input pulses 90% ...

Page 14

... V Figure 4 on page and t is less than t to eliminate bus contention between SRAMs when sharing the same data bus. OELZ CHZ CLZ CY7C1347G –166 –133 Max Min Max Min Max – ...

Page 15

... OEV OEHZ t OELZ t DOH Q(A2 Q(A1) BURST READ DON’T CARE UNDEFINED is HIGH, and CE is LOW. When CE is HIGH CY7C1347G A3 Burst continued with new base address Deselect cycle t CHZ Q( Q(A2) Q( Burst wraps around to its initial state is HIGH LOW HIGH ...

Page 16

... A2 t WES t WEH ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED is HIGH, and CE is LOW. When CE is HIGH LOW. x CY7C1347G ADSC extends burst t ADS t ADH A3 t WES t WEH t t ADVH ADVS D( D(A3 Extended BURST WRITE is HIGH LOW HIGH ...

Page 17

... Figure 7. Read/Write Cycle Timing WES t WEH OELZ D(A3) t OEHZ Q(A4) Single WRITE DON’T CARE UNDEFINED is HIGH, and CE is LOW. When CE is HIGH CY7C1347G A5 A6 D(A5) D(A6) Q(A4+1) Q(A4+2) Q(A4+3) BURST READ Back-to-Back WRITEs is HIGH LOW HIGH Page [+] Feedback ...

Page 18

... Device must be deselected when entering ZZ mode. See 24. DQs are in High Z when exiting ZZ sleep mode. Document #: 38-05516 Rev. *I [23, 24] Figure 8. ZZ Mode Timing DESELECT or READ Only High-Z DON’T CARE Truth Table on page 8 for all possible signal conditions to deselect the device. CY7C1347G t ZZREC t RZZI Page [+] Feedback ...

Page 19

... Ball Grid Array (14 × 22 × 2.4 mm) Pb-free 166 CY7C1347G-166AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free 200 CY7C1347G-200AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free 250 CY7C1347G-250AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free ...

Page 20

... Package Diagrams Document #: 38-05516 Rev. *I Figure 9. 100-pin TQFP (14 × 20 × 1.4 mm) CY7C1347G 51-85050 *D Page [+] Feedback ...

Page 21

... Package Diagrams (continued) Document #: 38-05516 Rev. *I Figure 10. 119-ball BGA (14 × 22 × 2.4 mm) CY7C1347G 51-85115 *C Page [+] Feedback ...

Page 22

... ODT on-die termination PLL phase-locked loop QDR quad data rate TAP test access port TCK test clock TDO test data out TDI test data in TMS test mode select Document #: 38-05516 Rev. *I Figure 11. 165-ball FBGA (13 × 15 × 1.4 mm) CY7C1347G 51-85180 *C Page [+] Feedback ...

Page 23

... Document History Page Document Title: CY7C1347G 4-Mbit (128 K × 36) Pipelined Sync SRAM Document Number: 38-05516 Orig. of Submission Revision ECN Change Date ** 224364 RKF See ECN *A 276690 VBL See ECN *B 333625 SYT See ECN *C 419256 RXU See ECN *D 480124 VKN See ECN ...

Page 24

... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 38-05516 Rev. *I All products and company names mentioned in this document may be the trademarks of their respective holders. cypress.com/go/plc Revised March 29, 2011 CY7C1347G PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 ...

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