CY7C1354CV25-166BZCT Cypress Semiconductor Corp, CY7C1354CV25-166BZCT Datasheet - Page 18

• Manufacturer Part Number: CY7C1354CV25-166BZCT
• Description: CY7C1354CV25-166BZCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1354CV25-166BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
(Above which the useful life may be impaired. For user
guidelines, not tested.)
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC to outputs in tri-state ....................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05537 Rev. *K
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
X
OZ
DD
SB1
SB2
SB3
SB4
17. Overshoot: V
18. T
Parameter
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND ≤ V
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
(AC) < V
DD
operating supply
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +3.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[17, 18]
[17]
for 2.5 V I/O
for 2.5 V I/O, I
for 2.5 V I/O, I
for 2.5 V I/O
for 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max V
V
f = f
Max V
V
f = 0
Max V
V
f = f
Max V
V
DD
DD
IN
IN
IN
IN
(min) within 200 ms. During this time V
≤ 0.3 V or V
≤ 0.3 V or V
MAX
≥ V
MAX
MAX
≥ V
= Max., I
DD
DD
DD
DD
IH
IH
DDQ
= 1/t
= 1/t
= 1/t
CYC
I
SS
DD
SS
DD
I
, device deselected,
, device deselected,
, device deselected,
, device deselected,
DD
or V
or V
≤ V
≤ V
/2), undershoot: V
CYC
CYC
CYC
+ 0.5 V
+ 0.5 V
OUT
DDQ
DDQ,
IN
IN
OH
OL
IN
IN
≤ V
≤ V
= 1.0 mA
= −1.0 mA
> V
> V
DD
= 0 mA,
output disabled
Test Conditions
IL
IL
DDQ
DDQ
,
, f = 0
− 0.3 V,
− 0.3 V,
IL
(AC)> –2 V (Pulse width less than t
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
< V
DD
and V
Ambient Temperature
DDQ
–40 °C to +85 °C
< V
0 °C to +70 °C
DD
.
CYC
/2).
2.375
2.375
–0.3
Min
–30
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CY7C1354CV25
CY7C1356CV25
V
DD
2.625
Max
V
250
220
180
130
120
120
100
110
110
0.4
0.7
30
40
40
+ 0.3 V
–
5
–
5
–
5
DD
2.5 V ± 5%
V
DD
Page 18 of 30
/V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
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