CY7C1380D-167AXIT Cypress Semiconductor Corp, CY7C1380D-167AXIT Datasheet - Page 24
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CY7C1380D-167AXIT
Manufacturer Part Number
CY7C1380D-167AXIT
Description
CY7C1380D-167AXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1380D-167AXC.pdf
(34 pages)
Specifications of CY7C1380D-167AXIT
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1380D-167AXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
ata Out (Q)
Switching Waveforms
Document #: 38-05543 Rev. *F
Data In (D)
Note
ADDRESS
27. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW
ADSC
ADSP
BWE,
ADV
BW
CLK
GW
OE
CE
X
BURST READ
High-Z
t ADS
t CES
t AS
A1
t ADH
t CEH
t AH
t CH
t
OEHZ
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t CYC
t ADS
t CL
t DS
Single WRITE
D(A1)
t ADH
t DH
(continued)
A2
Figure 11. Write Cycle Timing
D(A2)
DON’T CARE
D(A2 + 1)
t WES
BURST WRITE
t WEH
D(A2 + 1)
UNDEFINED
ADV suspends burst
X
LOW.
D(A2 + 2)
[26, 27]
ADSC extends burst
D(A2 + 3)
CY7C1380D, CY7C1382D
CY7C1380F, CY7C1382F
t ADS
A3
D(A3)
t ADH
t
ADVS
t WES
Extended BURST WRITE
D(A3 + 1)
t WEH
t
ADVH
D(A3 + 2)
Page 24 of 34
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