CY7C1460AV25-167BZXI Cypress Semiconductor Corp, CY7C1460AV25-167BZXI Datasheet - Page 19

• Manufacturer Part Number: CY7C1460AV25-167BZXI
• Description: CY7C1460AV25-167BZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1460AV25-167BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 36M (1M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC to outputs in tri-state ....................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05354 Rev. *G
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
X
OZ
DD
SB1
SB2
SB3
SB4
18. Overshoot: V
19. T
Parameter
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND  V
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
(AC) < V
DD
operating supply
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +3.6 V
relative to GND....... –0.5 V to +V
+1.5 V (Pulse width less than t
[18, 19]
[18]
[18]
for 2.5 V I/O
for 1.8 V I/O
for 2.5 V I/O, I
for 1.8 V I/O, I
for 2.5 V I/O, I
for 1.8 V I/O, I
for 2.5 V I/O
for 1.8 V I/O
for 2.5 V I/O
for 1.8 V I/O
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max V
V
f = f
Max V
V
f = 0
Max V
 0.3 V or V
f = f
Max V
V
f = 0
DD
DD
IN
IN
IN
(min) within 200 ms. During this time V
 0.3 V or V
MAX
 V
MAX
MAX
 V
= Max, I
DD
DD
DD
DD
IH
IH
DDQ
CYC
= 1/t
= 1/t
= 1/t
, device deselected, V
I
SS
DD
SS
DD
I
, device deselected,
, device deselected,
, device deselected,
DD
or V
or V
 V
 V
/2), undershoot: V
IN
OUT
CYC
CYC
CYC
+ 0.5 V
+ 0.5 V
DDQ
DDQ,
IN
IN
OH
OH
OL
OL
> V
IN
 V
 V
=1.0 mA
= 100 A,
= 0 mA,
=1.0 mA
= –100 A
> V
DD
DDQ
Test Conditions
output disabled
IL
IL
DDQ
,
,
0.3 V,
0.3 V,
IL
(AC) > –2 V (Pulse width less than t
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage........................................... > 2001V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial 0 °C to +70 °C
Industrial
IN
Range
IH
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 167 MHz
All speed grades
All speed grades
All speed grades
All speed grades
< V
DD
and V
–40 °C to +85 °C
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
2.375
2.375
1.26
–0.3
–0.3
Min
–30
1.7
2.0
1.6
1.7
–5
–5
–5
2.5 V – 5% /
–
–
–
–
–
–
–
–
–
–
–
+ 5%
V
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
DD
V
V
DD
DD
2.625
0.36
Max
V
435
385
335
185
120
160
135
1.9
0.4
0.2
0.7
30
+ 0.3V
+ 0.3V
–
–
5
5
–
5
DD
1.7 V to V
Page 19 of 29
V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
V
V
V
V
V
DD
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