CY7C1480BV25-200BZC Cypress Semiconductor Corp, CY7C1480BV25-200BZC Datasheet - Page 16

• Manufacturer Part Number: CY7C1480BV25-200BZC
• Description: CY7C1480BV25-200BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480BV25-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2.5 V TAP AC Test Conditions
Input pulse levels................................................ V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................ 1.25 V
Output reference levels ............................................... 1.25 V
Test load termination supply voltage ........................... 1.25 V
TAP DC Electrical Characteristics And Operating Conditions
(0°C < T
Table 8. Identification Register Definitions
Table 9. Scan Register Sizes
Note
Document Number: 001-15143 Rev. *F
V
V
V
V
V
V
I
Revision number (31:29)
Device depth (28:24)
Architecture/Memory
Type(23:18)
Bus width/density(17:12)
Cypress JEDEC ID code
(11:1)
ID register presence
indicator (0)
Instruction
Bypass
ID
Boundary scan order – 165FBGA
Boundary scan order – 209BGA
11. All voltages refer to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
Instruction Field
A
< +70°C; V
SS
DD
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input load current
(GND).
Register Name
= 2.5 V ±0.125 V unless otherwise noted)
Description
CY7C1480BV25
00000110100
(2M x36)
100100
000000
01011
000
1
I
I
I
I
V
V
GND ≤ V
OH
OH
OL
OL
DDQ
DDQ
SS
= 1.0 mA, V
= 100 μA, V
= –1.0 mA, V
= –100 μA, V
= 2.5 V
= 2.5 V
to 2.5 V
CY7C1482BV25
I
00000110100
≤ V
(4M x 18)
000000
010100
01011
DDQ
000
Test Conditions
1
DDQ
DDQ
DDQ
DDQ
[11]
= 2.5 V
= 2.5 V
= 2.5 V
= 2.5 V
Bit Size (x36)
Figure 5. 2.5 V TAP AC Output Load Equivalent
32
73
3
1
–
CY7C1482BV25, CY7C1486BV25
CY7C1486BV25
TDO
00000110100
(1M x72)
000000
110100
01011
000
1
Bit Size (x18)
Z = 50Ω
O
32
54
3
1
–
–0.3
Min
1.7
2.1
1.7
–5
–
–
Defines width and density
Describes the version number
Reserved for internal use
Defines memory type and
architecture
Enables unique identification of
SRAM vendor
Indicates the presence of an ID
register
CY7C1480BV25
V
1.25V
DD
Description
Max
0.4
0.2
0.7
–
–
5
+ 0.3
Bit Size (x72)
20pF
50Ω
Page 16 of 31
112
32
3
1
–
Unit
μA
V
V
V
V
V
V
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