CY8C3245LTI-163 Cypress Semiconductor Corp, CY8C3245LTI-163 Datasheet - Page 95

CY8C3245LTI-163

CY8C3245LTI-163

Manufacturer Part Number
CY8C3245LTI-163
Description
CY8C3245LTI-163
Manufacturer
Cypress Semiconductor Corp
Series
PSOC™ 3 CY8C32xxr
Datasheets

Specifications of CY8C3245LTI-163

Core Processor
8051
Core Size
8-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, LIN, SPI, UART/USART
Peripherals
CapSense, DMA, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 5.5 V
Data Converters
A/D 2x12b, D/A 1x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
CY8C32
Core
8051
Data Bus Width
32 bit
Data Ram Size
4 KB
Interface Type
I2C, SPI, UART, USB
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
46
Number Of Timers
4
Operating Supply Voltage
1.71 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Controller Family/series
(8051) PSOC 3
No. Of I/o's
38
Eeprom Memory Size
1KB
Ram Memory Size
4KB
Cpu Speed
50MHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11-47. EEPROM AC Specifications
11.4.3 Nonvolatile Latches (NVL))
Table 11-48. NVL DC Specifications
Table 11-49. NVL AC Specifications
11.4.4 SRAM
Table 11-50. SRAM DC Specifications
Table 11-51. SRAM AC Specifications
Document Number: 001-56955 Rev. *J
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp.
T
cycles
V
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
A
DDD
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
≤ 25 °C,
≤ 55 °C,
PSoC
1.71
Min
Min
Min
100
Min
Min
1.2
DC
1K
20
20
10
20
20
®
3: CY8C32 Family
Typ
Typ
Typ
Typ
Typ
2
Data Sheet
50.01
Max
Max
Max
Max
Max
5.5
20
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program/
program/
cycles
cycles
Units
years
Units
Units
erase
erase
years
years
Units
Units
MHz
ms
V
V
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