IS42S16320B-6TL INTEGRATED SILICON SOLUTION (ISSI), IS42S16320B-6TL Datasheet - Page 15

• Manufacturer Part Number: IS42S16320B-6TL
• Description: 512M, 3.3v, SDRAM, 32Mx16, 166MHz, 54 Pin TSOP II (400 Mil) RoHS
• Manufacturer: INTEGRATED SILICON SOLUTION (ISSI)

DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S86400B, IS42S16320B
ABSOLUTE MAXIMUM RATINGS
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00F
08/11/08
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
C
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
cs
opr
out
ih
il
stg
dd max
ddq max
in
d max
in1
in2
i
/
V
V
V
o
(undershoot): V
V
(overshoot): V
ddq
ih
il
dd
(2)
(1)
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
ih
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
ih
(max) = V
(min) = -1.2V (
ddq
+1.2V (
pulse width
pulse width
(1)
< 3ns).
(At T
< 3ns).
a
= 0 to +25°C, V
Com.
Ind.
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
dd
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
—
—
-40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
= 3.3 ± 0.3V)
+ 0.5
V
ddq
Max.
+0.8
3.6
3.6
Max.
3.5
3.8
6.0
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
V
V
V
V
15