BAT18,235 NXP Semiconductors, BAT18,235 Datasheet - Page 3

• Manufacturer Part Number: BAT18,235
• Description: DIODE 35V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAT18,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 35V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Resistance @ If, F: 700 mOhm @ 5mA, 200MHz
• Configuration: Single
• Reverse Voltage: 35 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Forward Voltage Drop: 1.2 V
• Maximum Diode Capacitance: 1 pF
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
9397 750 13385
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse
(mA)
(1) T
(2) T
(3) T
(pF)
C d
I
F
100
1.5
1.3
1.1
0.9
0.7
0.5
80
60
40
20
0
10
voltage.
f = 1 MHz; T
voltage; typical values.
0.3
j
j
j
-1
= 60 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
j
= 25 C.
0.7
1
(1)
(2)
1.1
10
(3)
V
V
R
F
001aab165
001aab167
(V)
(V)
10
Rev. 02 — 31 August 2004
1.5
2
Fig 2. Reverse current as a function of junction
Fig 4. Diode forward resistance as a function of
(nA)
I
(1) maximum values.
(2) typical values.
R
10
( )
r
10
10
10
10
D
10
1
2
1
0
5
4
3
2
1
V
temperature.
f = 200 MHz; T
forward current; typical values.
1
0
R
= 20 V.
40
j
= 25 C.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
80
10
I
Silicon planar diode
F
120
(mA)
(2)
(1)
T j ( C)
001aab166
001aab168
BAT18
160
10
2
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