MBR20H100CT ON Semiconductor, MBR20H100CT Datasheet - Page 3

• Manufacturer Part Number: MBR20H100CT
• Description: Schottky (Diodes & Rectifiers) 20A 100V H-Series
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20H100CT

• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V @ 20 A
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): -
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
100
0.1
10
20
15
10
1
5
0
100
0
V
0
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
110
0.2
Figure 1. Typical Forward Voltage
T
J
Figure 3. Typical Reverse Current
= 125°C
120
20
T
Figure 5. Current Derating
V
C
R
, CASE TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
T
0.4
SQUARE WAVE
J
130
= 150°C
40
dc
T
T
T
0.6
140
T
J
J
J
J
= 150°C
= 125°C
= 25°C
= 25°C
150
60
0.8
160
1.0
80
170
http://onsemi.com
1.2
180
100
3
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
100
0.1
10
16
14
12
10
1
8
6
4
2
0
0
0
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
Figure 2. Maximum Forward Voltage
O
T
Figure 6. Forward Power Dissipation
0.2
, AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Maximum Reverse Current
J
= 125°C
20
5
V
R
, REVERSE VOLTAGE (VOLTS)
0.4
T
J
SQUARE
= 150°C
10
40
T
T
T
J
J
0.6
J
= 150°C
T
= 125°C
= 25°C
J
= 25°C
15
60
0.8
DC
20
80
1.0
1.2
100
25