PMEG2010BEV T/R NXP Semiconductors, PMEG2010BEV T/R Datasheet - Page 3

• Manufacturer Part Number: PMEG2010BEV T/R
• Description: Schottky (Diodes & Rectifiers) DIODE SCHTTKY TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PMEG2010BEV T/R

• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMEG2010BEV,115

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
2004 Jun 14
PMEGXX10BEA
PMEGXX10BEV
V
I
I
I
T
T
T
F
FRM
FSM
TYPE NUMBER
j
amb
stg
R
1 A very low V
barrier rectifier
P
rating will be available on request.
SYMBOL
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
F
NAME
MEGA Schottky
−
PARAMETER
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
3
T
t
t
note 2
note 3
note 3
p
p
DESCRIPTION
s
≤ 1 ms; δ ≤ 0.5; note 2
= 8 ms; square wave;
≤ 55 °C; note 1
PACKAGE
CONDITIONS
−
−
−
−
−
−
−
−65
−65
PMEGXX10BEA;
MIN.
PMEGXX10BEV
20
30
40
1
3.5
10
150
+150
+150
Product data sheet
MAX.
VERSION
SOD323
SOT666
R
and I
V
V
V
A
A
A
°C
°C
°C
UNIT
F(AV)