BAV23,215 NXP Semiconductors, BAV23,215 Datasheet - Page 6

DIODE SW DBL 200V 225MA SOT143B

BAV23,215

Manufacturer Part Number
BAV23,215
Description
DIODE SW DBL 200V 225MA SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV23,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
225mA (DC)
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.225 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1620-2
933720770215
BAV23 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV23,215
Manufacturer:
NXP
Quantity:
1 988
Part Number:
BAV23,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
8. Test information
BAV23_SER_7
Product data sheet
Fig 4.
Fig 6.
(pF)
V = V
(1) I
C
1.0
0.8
0.6
0.4
0.2
d
R
S
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Reverse recovery time test circuit and waveforms
0
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
2
amb
= 25 C
I
4
F
D.U.T.
6
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
V
mga881
R
SAMPLING
mbg447
R
(V)
i
= 50
Rev. 07 — 19 March 2010
8
Ω
V
R
Fig 5.
t
10 %
r
(mA)
I
(1) Single diode loaded.
(2) Double diode loaded.
90 %
F
300
200
100
0
input signal
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curves
t
p
(1)
(2)
Dual high-voltage switching diodes
50
t
100
BAV23 series
+ I
F
output signal
150
© NXP B.V. 2010. All rights reserved.
T
amb
006aab214
t rr
(°C)
200
(1)
t
6 of 13

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