BAT17 /T3 NXP Semiconductors, BAT17 /T3 Datasheet - Page 2

Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11

BAT17 /T3

Manufacturer Part Number
BAT17 /T3
Description
Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT17 /T3

Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Package / Case
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT17,235
NXP Semiconductors
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance.
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
DESCRIPTION
Planar Schottky barrier diode in a
small SOT23 plastic SMD package.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Mar 25
V
I
T
T
TYPE NUMBER
SYMBOL
F
stg
j
R
Schottky barrier diode
∗ = t : Made in Malaysia.
∗ = W : Made in China.
BAT17
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MARKING
CODE
A3*
(1)
PINNING
PARAMETER
PIN
1
2
3
handbook, halfpage
anode
not connected
cathode
Fig.1 Simplified outline (SOT23) and symbol.
2
2
3
1
DESCRIPTION
n.c.
2
−65
MIN.
3
Product data sheet
4
30
+150
100
MAM171
MAX.
1
BAT17
V
mA
°C
°C
UNIT

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