BAT17,215 NXP Semiconductors, BAT17,215 Datasheet

DIODE SCHOTTKY 4V 30MA SOT-23

BAT17,215

Manufacturer Part Number
BAT17,215
Description
DIODE SCHOTTKY 4V 30MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT17,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Current - Max
30mA
Voltage - Peak Reverse (max)
4V
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Resistance @ If, F
15 Ohm @ 5mA, 1kHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933410700215::BAT17 T/R::BAT17 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT17,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 May 26
DATA SHEET
fpage
BAT17
Schottky barrier diode
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 25

Related parts for BAT17,215

BAT17,215 Summary of contents

Page 1

DATA SHEET fpage BAT17 Schottky barrier diode Product data sheet Supersedes data of 1999 May 26 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 25 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Low forward voltage • Small SMD package • Low capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection. DESCRIPTION Planar Schottky barrier diode in a small SOT23 plastic SMD package. MARKING ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I reverse current R r diode forward resistance D C diode capacitance d F noise figure Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 2 10 handbook, halfpage I F (mA −1 10 − 200 400 = 100 °C. (1) T (3) T amb = 60 °C. (2) T (4) T amb Fig.2 Forward current as a function of forward voltage; typical values. 0.8 handbook, halfpage C d (pF) 0.7 0.6 0.5 0.4 ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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