DAN217T146 Rohm Semiconductor, DAN217T146 Datasheet
DAN217T146
Manufacturer Part Number
DAN217T146
Description
DIODE SWITCH 80V 100MA SOT-346
Manufacturer
Rohm Semiconductor
Specifications of DAN217T146
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Diode Case
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
100 mA
Max Surge Current
300 mA
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
200 mW
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Diode Case Style
TO-236
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DAN217T146TR
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Diodes
Switching diode
DAN217
Ultra high speed switching
1) Small mold type. (SMD3)
2) High reliability.
Silicon epitaxial planar
R
Revers e voltage (DC)
F
A
S
P
J
S
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Application
unction tem perature
Features
Construction
Absolute maximum ratings (Ta=25°C)
orward current (Single)
verage rectified forward current (Single)
Electrical characteristics (Ta=25°C)
urge current （ t=1us ）
ower dis s ipation
torage tem perature
evers e voltage (repetitive peak)
Parameter
Param eter
3.2±0.1
4.0±0.1
Symbol
V
Ct
trr
Sym bol
I
R
F
External dimensions (Unit : mm)
Ts tg
Taping specifications (Unit : mm)
I
V
surg e
I
Pd
V
Io
Tj
FM
RM
R
2.0±0.05
0.4
－0.05
＋0.1
(2)
0.95
Min.
2.9±0.2
1.9±0.2
-
-
-
-
Each lead has same dimension
各リードとも
同寸法
4.0±0.1
(3)
0.95
-55 to +150
Lim its
Typ.
(1)
300
100
200
150
φ1.5±0.1
0
80
80
4
-
-
-
-
JEDEC :S0T-346
JEITA : SC-59
ROHM : SMD3
Max.
0.15
1.2
0.1
3.5
weekcode
1.1±0.2
4
0.8±0.1
＋0.1
－0.06
0.01
φ1.05MIN
0～0.1
Unit
m W
m A
m A
℃
℃
Unit
V
V
A
µA
pF
ns
V
Structure
Land size figure (Unit : mm)
I
V
V
V
SMD3
F
R
R
R
=100mA
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
0.8MIN.
0.95
Conditions
1.9
Rev.B
0.3±0.1
1.35±0.1
DAN217
1/2
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DAN217T146 Summary of contents
Page 1
Diodes Switching diode DAN217 Application Ultra high speed switching Features 1) Small mold type. (SMD3) 2) High reliability. Construction Silicon epitaxial planar 4.0±0.1 3.2±0.1 Absolute maximum ratings (Ta=25°C) Param eter R evers e voltage (repetitive peak) Revers e voltage (DC) ...
Page 2
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7mV 900 VF ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...