BAT754C,215 NXP Semiconductors, BAT754C,215 Datasheet - Page 4

• Manufacturer Part Number: BAT754C,215
• Description: DIODE SCHOTTKY 30V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAT754C,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 600mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.42 V @ 0.03 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3421-2; 934055731215; BAT754C T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 25
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
I F
10
(pF)
C d
10
10
10
15
10
1
amb
amb
amb
5
0
3
2
1
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V F (V)
V R (V)
MSA891
MSA892
1.2
30
4
(1) T
(2) T
(3) T
Fig.7
(μA)
I
R
10
10
10
10
amb
amb
amb
3
2
1
1
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
BAT754 series
20
Product data sheet
V
R
(1)
(2)
(3)
(V)
MSA893
30