BAT54SWT1G ON Semiconductor, BAT54SWT1G Datasheet

BAT54SWT1G

Manufacturer Part Number

BAT54SWT1G

Description

DIODE SCHOTTKY DUAL 30V SOT323

Manufacturer

ON Semiconductor

Datasheets

1.BAT54SWT1G.pdf (4 pages)

2.BAT54SWT1G.pdf (3 pages)

Specifications of BAT54SWT1G

Voltage - Forward (vf) (max) @ If

800mV @ 100mA

Current - Reverse Leakage @ Vr

2µA @ 25V

Current - Average Rectified (io) (per Diode)

200mA (DC)

Voltage - Dc Reverse (vr) (max)

30V

Reverse Recovery Time (trr)

5ns

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Product

Schottky Diodes

Peak Reverse Voltage

30 V

Forward Continuous Current

0.2 A

Max Surge Current

0.6 A

Configuration

Dual Series

Recovery Time

5 ns

Forward Voltage Drop

0.8 V @ 0.1 A

Maximum Reverse Leakage Current

2 uA @ 25 V

Operating Temperature Range

- 55 C to + 125 C

Mounting Style

SMD/SMT

Current, Forward

200 mA

Package Type

SOT-323 (SC-70)

Power Dissipation

200 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-55 to +125 °C

Time, Recovery

5 ns

Voltage, Forward

0.52 V

Voltage, Reverse

30 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BAT54SWT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON Semiconductor

Quantity:

114 811

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON Semiconductor

Quantity:

16 650

Company:

Meier Automation Equipment Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BAT54SWT1G

Quantity:

24 000

Current page: 1 of 3
Download datasheet (46Kb)

BAT54SWT1

Dual Series Schottky

Barrier Diodes

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MAXIMUM RATINGS

Reverse Voltage

Forward Power Dissipation

Forward Current (DC)

Junction Temperature

Storage Temperature Range

These Schottky barrier diodes are designed for high speed switching

Extremely Fast Switching Speed

Low Forward Voltage − 0.35 Volts (Typ) @ I

Pb−Free Package is Available

@ T

Derate above 25°C

= 25°C

Rating

= 125°C unless otherwise noted)

Preferred Device

Symbol

stg

−55 to +150

−55 to 125

200 Max

= 10 mAdc

Value

200

1.6

mW/°C

Unit

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

BAT54SWT1

BAT54SWT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation may vary depending

upon manufacturing location.

Device

(Note: Microdot may be in either location)

DUAL SERIES SCHOTTKY

ANODE

ORDERING INFORMATION

BARRIER DIODES

CATHODE/ANODE

(Pb−Free)

SOT−323

Package

CASE 419

30 VOLT

SOT−323

= Device Code

= Date Code*

= Pb−Free Package

STYLE 9

3000 / Tape & Reel

CATHODE

MARKING

DIAGRAM

Shipping

B8M G

†

Related parts for BAT54SWT1G

BAT54SWT1G Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT−323 3000 / Tape & Reel BAT54SWT1G SOT−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage = 10 mA Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I ...

Page 3

... 0.05 (0.002) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. t BAT54SWT1 PACKAGE DIMENSIONS SOT−323 (SC−70) CASE 419−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2. CONTROLLING DIMENSION: INCH. ...

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