BAT54SWT1G ON Semiconductor, BAT54SWT1G Datasheet

BAT54SWT1G

Manufacturer Part Number

BAT54SWT1G

Description

DIODE SCHOTTKY DUAL 30V SOT323

Manufacturer

ON Semiconductor

Datasheets

1.BAT54SWT1G.pdf (4 pages)

2.BAT54SWT1G.pdf (3 pages)

Specifications of BAT54SWT1G

Voltage - Forward (vf) (max) @ If

800mV @ 100mA

Current - Reverse Leakage @ Vr

2µA @ 25V

Current - Average Rectified (io) (per Diode)

200mA (DC)

Voltage - Dc Reverse (vr) (max)

30V

Reverse Recovery Time (trr)

5ns

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Product

Schottky Diodes

Peak Reverse Voltage

30 V

Forward Continuous Current

0.2 A

Max Surge Current

0.6 A

Configuration

Dual Series

Recovery Time

5 ns

Forward Voltage Drop

0.8 V @ 0.1 A

Maximum Reverse Leakage Current

2 uA @ 25 V

Operating Temperature Range

- 55 C to + 125 C

Mounting Style

SMD/SMT

Current, Forward

200 mA

Package Type

SOT-323 (SC-70)

Power Dissipation

200 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-55 to +125 °C

Time, Recovery

5 ns

Voltage, Forward

0.52 V

Voltage, Reverse

30 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BAT54SWT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON Semiconductor

Quantity:

114 811

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON Semiconductor

Quantity:

16 650

Company:

Meier Automation Equipment Co., Limited

Part Number:

BAT54SWT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BAT54SWT1G

Quantity:

24 000

Current page: 1 of 4
Download datasheet (98Kb)

BAT54SWT1G

Dual Series Schottky

Barrier Diodes

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

August, 2010 − Rev. 9

MAXIMUM RATINGS

Non−Repetitive Peak Forward Current

Repetitive Peak Forward Current

66%

Reverse Voltage

Forward Power Dissipation

Forward Current (DC)

Junction Temperature

Storage Temperature Range

These Schottky barrier diodes are designed for high speed switching

Pulse Wave = 1 sec, Duty Cycle =

Compliant

Extremely Fast Switching Speed

Low Forward Voltage − 0.35 Volts (Typ) @ I

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

@ T

Derate above 25°C

= 25°C

< 10 msec

Rating

= 125°C unless otherwise noted)

Symbol

FRM

FSM

stg

−55 to +150

−55 to 125

200 Max

= 10 mAdc

Value

200

600

300

1.6

mW/°C

Unit

°C

†For information on tape and reel specifications,

BAT54SWT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation may vary depending

upon manufacturing location.

Device

(Note: Microdot may be in either location)

DUAL SERIES SCHOTTKY

ANODE

ORDERING INFORMATION

BARRIER DIODES

http://onsemi.com

CATHODE/ANODE

(Pb−Free)

SOT−323

Package

CASE 419

30 VOLT

SOT−323

= Device Code

= Date Code*

= Pb−Free Package

STYLE 9

Publication Order Number:

3000 / Tape & Reel

CATHODE

BAT54SWT1/D

MARKING

DIAGRAM

Shipping

B8M G

†

Related parts for BAT54SWT1G

BAT54SWT1G Summary of contents

Page 1

... I 200 Max 600 mA FSM I 300 mA FRM T −55 to 125 ° −55 to +150 °C stg BAT54SWT1G †For information on tape and reel specifications, 1 http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES 1 2 ANODE CATHODE 3 CATHODE/ANODE MARKING DIAGRAM 3 SOT−323 B8M G CASE 419 G 1 STYLE 9 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...

Page 3

V , FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1000 T = 150°C A 100 10 1.0 0.1 0.01 0.001 ...

Page 4

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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