BAV 99S E6327 Infineon Technologies, BAV 99S E6327 Datasheet - Page 2

• Manufacturer Part Number: BAV 99S E6327
• Description: DIODE SW DUAL SERIES 80V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BAV 99S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 0.75 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV 99S E6327; BAV99SE6327INTR; BAV99SE6327XT; SP000010356

Maximum Ratings at T
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
t = 1 ms
t = 1 s, single
t = 1 s, double
Total power dissipation
BAV99, T
BAV99S, T
BAV99U, T
BAV99W, T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
BAV99
BAV99S
BAV99U
BAV99W
1
For calculation of R thJA please refer to Application Note Thermal Resistance
S
S
S
S
28°C
85°C
113°C
110°C
A
1)
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
P
T
T
Symbol
R
F
FSM
j
stg
R
RM
tot
thJS
-65 ... 150
Value
Value
0.75
330
250
250
250
200
150
4.5
0.5
80
85
360
260
150
160
1
2007-09-19
BAV99...
Unit
V
mA
A
mW
°C
Unit
K/W