EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 7
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EC103D1 T/R
Manufacturer Part Number
EC103D1 T/R
Description
SCRs TAPE SCR
Manufacturer
NXP Semiconductors
Datasheet
1.EC103D1_TR.pdf
(12 pages)
Specifications of EC103D1 T/R
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.35 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.012 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EC103D1,116
NXP Semiconductors
EC103D1_2
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current as a function of on-state
V
GT(25 C)
V
(A)
I
GT
T
(1) T
(2) T
(3) T
1.6
1.2
0.8
0.4
2.5
2.0
1.5
1.0
0.5
0
junction temperature
voltage
0.4
50
V
R
o
j
j
j
s
= 125 C; typical values
= 125 C; maximum values
= 25 C; typical values
= 0.895 V
= 0.195
0
0.8
(1)
50
(2)
1.2
(3)
100
V
003aaa112
T
003aaa109
T
j
( C)
(V)
150
1.6
Rev. 02 — 31 July 2008
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT
I
L
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
0
0
junction temperature
junction temperature
50
50
R
GK
= 1 k
0
0
50
50
Thyristor, sensitive gate
100
100
EC103D1
© NXP B.V. 2008. All rights reserved.
003aaa113
T
003aaa114
T
j
j
( C)
( C)
150
150
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