BTA216X-600E NXP Semiconductors, BTA216X-600E Datasheet

Triacs RAIL TRIAC

BTA216X-600E

Manufacturer Part Number
BTA216X-600E
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BTA216X-600E127.pdf (7 pages)

Specifications of BTA216X-600E

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
150 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
25 mA
Forward Voltage Drop
1.5 V @ 20A
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA216X-600E,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BTA216X-600E
Manufacturer:
NXP
Quantity:
10 000
Philips Semiconductors
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs
in a full pack, plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level" D
series are intended for interfacing with low
power drivers, including micro controllers.
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
April 2002
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
case isolated
PIN
t
stg
j
DRM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
hs
j
G
= 25 ˚C prior to
/dt = 0.2 A/ s
= 20 A; I
38 ˚C
QUICK REFERENCE DATA
SYMBOL
V
I
I
T(RMS)
TSM
DRM
G
case
= 0.2 A;
1
1 2 3
current
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state
MIN.
-40
-
-
-
-
-
-
-
-
-
BTA216X series D, E and F
SYMBOL
T2
BTA216X-
BTA216X-
BTA216X-
MAX.
600
140
150
100
150
125
0.5
16
98
2
5
1
Product specification
MAX.
600D
600E
600F
600
140
16
Rev 2.000
UNIT
UNIT
G
A/ s
T1
A
˚C
˚C
W
W
V
A
A
A
A
V
A
A
2
s

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BTA216X-600E Summary of contents

Page 1

... ˚C prior to j surge 16 0 / over any period - Product specification BTA216X series D, E and F MAX. BTA216X- 600D BTA216X- 600E BTA216X- 600F 600 16 140 SYMBOL T2 MAX. 1 600 16 140 150 98 100 2 5 0.5 150 125 Rev 2.000 UNIT V A ...

Page 2

... CONDITIONS BTA216X 0 T2+ G+ T2 T2+ G+ T2 400 0 125 ˚ 125 ˚C D DRM(max Product specification BTA216X series D, E and F MIN. TYP. MAX 2500 - 10 - MIN. TYP. MAX 4 5 MIN. MAX. ...D ...E ... ...

Page 3

... PARAMETER dV /dt Critical rate of rise of D off-state voltage dI /dt Critical rate of change of com commutating current dI /dt Critical rate of change of com commutating current April 2002 BTA216X series D, E and F CONDITIONS BTA216X- ... 67 DRM(max 110 ˚C; exponential j waveform; gate open circuit V = 400 125 ˚C; ...

Page 4

... Tj initial = 25 C max 10ms 100ms Fig.5. Maximum permissible repetitive rms on-state , for current I p 20ms TSM T time Tj initial = 25 C max 100 1000 Product specification BTA216X series D, E and F IT(RMS BT139X Ths / C versus heatsink temperature T IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 5

... Fig.11. Transient thermal impedance dIcom/dt (A/ms) 100 100 150 ( (25˚C), Fig.12. Minimum, critical rate of change commutating current Product specification BTA216X series D, E and F BT139 typ max 0.5 1 1 Zth j-hs (K/W) with heatsink compound without heatsink compound unidirectional bidirectional 0.1ms 1ms 10ms 0. ...

Page 6

... Epoxy meets UL94 V0 at 1/8". April 2002 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BTA216X series D, E and F 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.0 (2x) 0.9 0.7 1.3 Rev 2.000 ...

Page 7

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 7 Product specification BTA216X series D, E and F Rev 2.000 ...

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