BTA216X-600E NXP Semiconductors, BTA216X-600E Datasheet - Page 3

• Manufacturer Part Number: BTA216X-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA216X-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V @ 20A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA216X-600E,127

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
April 2002
Three quadrant triacs
guaranteed commutation
j
SYMBOL
dV
dI
dI
= 25 ˚C unless otherwise stated
com
com
D
/dt
/dt
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T(RMS)
T(RMS)
DM
j
DM
DM
= 110 ˚C; exponential
com
com
= 67% V
= 400 V; T
= 400 V; T
/dt = 10V/ s; gate
/dt = 0.1V/ s; gate
= 16 A;
= 16 A;
DRM(max)
3
BTA216X-
j
j
= 125 ˚C;
= 125 ˚C;
;
...D
2.5
30
12
BTA216X series D, E and F
MIN.
...E
6.2
60
20
...F
70
18
50
Product specification
MAX.
-
-
-
Rev 2.000
UNIT
A/ms
A/ms
V/ s