BTA212B-800E /T3 NXP Semiconductors, BTA212B-800E /T3 Datasheet
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BTA212B-800E /T3
Specifications of BTA212B-800E /T3
Related parts for BTA212B-800E /T3
BTA212B-800E /T3 Summary of contents
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... Operating junction j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed October 2003 BTA212B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER V Repetitive peak off-state ...
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... V = 400 125 ˚C; 1 T(RMS) dV /dt = 10V/ s; gate com open circuit V = 400 125 ˚C; 3 T(RMS) dV /dt = 0.1V/ s; gate com open circuit 2 Product specification BTA212B series D, E and F MIN. TYP. MAX. UNIT - - 1.5 K 2.0 K K/W MAX. UNIT ...D ...E ... ...
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... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA212B series D, E and F BT138 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
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... I (25˚C), Fig.11. Transient thermal impedance dIcom/dt (A/ms 100 150 (25˚C), Fig.12. Minimum, critical rate of change commutating current Product specification BTA212B series D, E and F typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width 100 40 120 ...
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... Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BTA212B series D, E and F 4.5 max 1.4 max 2.5 0.5 17.5 Rev 3.000 ...
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... The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2003 BTA212B series D, E and F DEFINITIONS This data sheet contains data from the objective specification for product development ...