BTA212B-800E /T3 NXP Semiconductors, BTA212B-800E /T3 Datasheet - Page 5
![Triacs THYR AND TRIACS](/photos/16/4/160465/to3_sml.jpg)
BTA212B-800E /T3
Manufacturer Part Number
BTA212B-800E /T3
Description
Triacs THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-800E118.pdf
(6 pages)
Specifications of BTA212B-800E /T3
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
25 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA212B-800E,118
Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Plastic meets UL94 V0 at 1/8".
October 2003
Three quadrant triacs
guaranteed commutation
Dimensions in mm
Net Mass: 1.4 g
Dimensions in mm
2.54 (x2)
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Fig.13. SOT404 : centre pin connected to mounting base.
10.3 max
9.0
0.85 max
(x2)
3.8
5
11 max
2.0
11.5
5.08
15.4
BTA212B series D, E and F
4.5 max
1.4 max
17.5
0.5
Product specification
2.5
Rev 3.000