BT258-800R NXP Semiconductors, BT258-800R Datasheet
BT258-800R
Specifications of BT258-800R
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BT258-800R Summary of contents
Page 1
... CONDITIONS half sine wave; T 111 ˚C mb all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT258 series MAX. MAX. MAX. UNIT BT258- 500R 600R 800R 500 600 800 SYMBOL a g MIN. MAX. UNIT ...
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... DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258 series MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. MAX. UNIT ...
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... I p 10ms. p 1.6 111 C 1.4 1.2 0.8 0.6 0.4 100 150 , T(RMS Product specification BT258 series ITSM / initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT258 series 125 typ max 0.04 0 0.1ms 1ms 10ms 0. j-mb pulse width RGK = 100 ohms 50 100 ...
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... Epoxy meets UL94 V0 at 1/8". October 2002 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT258 series 4,5 max 1,3 5,9 min 0,6 2,4 Rev 2.000 15,8 max ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT258 series Rev 2.000 ...