BT151-650L NXP Semiconductors, BT151-650L Datasheet - Page 5

• Manufacturer Part Number: BT151-650L
• Description: SCRs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT151-650L

• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151-650L,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT151-650L_5
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
th(j-mb)
(K/W)
I
TSM
(A)
10
10
10
160
120
80
40
10
0
1
1
2
3
10
values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Transient thermal impedance from junction to mounting base as a function of pulse width
1
5
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient free
air
10
4
Conditions
see
Figure 6
10
10
3
Rev. 05 — 2 March 2009
10
2
10
10
2
1
SCR, 12 A, 5 mA, 650 V, SOT78
Min
-
-
number of cycles
P
1
BT151-650L
T
I
T
j
initial = 25 C max
Typ
-
60
t
p
t
T
p
t
p
© NXP B.V. 2009. All rights reserved.
(s)
003aab829
001aaa962
=
Max
1.3
-
I
TSM
t
T
t
p
t
10
10
3
Unit
K/W
K/W
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