BT151-800C,127 NXP Semiconductors, BT151-800C,127 Datasheet
BT151-800C,127
Specifications of BT151-800C,127
934058482127
BT151-800C
Related parts for BT151-800C,127
BT151-800C,127 Summary of contents
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... ˚C j prior to surge over any 20 ms period - - Product specification BT151 series C MAX. MAX. MAX. UNIT 500C 650C 800C 500 650 800 V 7.5 7.5 7 100 100 100 A SYMBOL MAX. UNIT -500C -650C -800C ...
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... RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; Gate open circuit R = 100 0 DRM(max / 67 125 ˚C; D DRM(max / / 100 Product specification BT151 series C MIN. TYP. MAX. UNIT - - 1.3 K K/W MIN. TYP. MAX. UNIT - 1.44 1. 0.6 1.5 V 0.25 0 0.1 0.5 mA MIN. TYP. MAX. UNIT ...
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... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT151 series C I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.11. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT151 series C typ max 0 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 Ohms gate open circuit 50 100 /dt versus junction temperature T ...
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... Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2004 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT151 series C 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT151 series C Rev 1.000 ...