BT1306-400D NXP Semiconductors, BT1306-400D Datasheet - Page 5

• Manufacturer Part Number: BT1306-400D
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT1306-400D

• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 8.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 2 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.9 V @ 0.85 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT1306-400D,412

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12593
Product data
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise specified.
D
com
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage current
critical rate of rise of off-state
voltage
critical rate of rise of commutation
voltage
gate controlled turn-on time
Conditions
V
V
V
I
V
V
V
V
exponential waveform; gate open circuit;
Figure 12
V
commutating dI/dt = 0.3 A/ms
I
dI
T
TM
Rev. 01 — 19 February 2004
D
D
D
D
D
D
D
D
G
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 0.85 A;
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% of V
= rated V
= 1.0 A; V
DRM
DRM(max)
; I
T
T
GT
T
Figure 11
T
DM
= 0.1 A;
= 0.1 A;
= 0.1 A;
D
= 0.1 A; T
DM(max)
= 0.1 A;
; T
; T
= V
j
case
= 110 C
DRM(max)
; T
= 50 C; I
Figure 8
Figure 9
Figure 7
Figure 10
j
case
= 110 C
; I
= 110 C;
G
TM
= 25 mA;
BT1306-400D/600D
= 0.84 A;
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
0.1
-
30
-
-
Typ
1
2
2
4
1
5
1
2
1
1.4
0.9
0.7
3
45
5
2
Logic level triac
Max
5
5
5
7
10
10
10
10
10
1.9
2
-
100
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V/ s
V/ s
5 of 11
A
s