BT1306-600D NXP Semiconductors, BT1306-600D Datasheet - Page 3

• Manufacturer Part Number: BT1306-600D
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT1306-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 8.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 2 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.9 V @ 0.85 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT1306-600D,412

Philips Semiconductors
9397 750 12593
Product data
Fig 1. Maximum permissible on-state current (RMS
Fig 3. Maximum permissible non-repetitive peak
I T(RMS)
I TSM
(A)
(A)
t
initial T
p
10 2
10 3
10
0.8
0.6
0.4
0.2
1
0
value) as a function of lead temperature.
on-state current as a function of pulse width for
sinusoidal currents.
20 ms
10 -5
0
j
25 C
T2- G+ quadrant
dI T /dt limit
10 -4
50
10 -3
I
T
100
t p
10 -2
T lead (˚C)
t p (s)
003aaa040
003aaa037
I TSM
time
10 -1
Rev. 01 — 19 February 2004
150
Fig 2. Maximum permissible repetitive on-state
Fig 4. Maximum permissible non-repetitive peak
I T(RMS)
I TSM
f = 50 Hz
T
n = number of cycles
f = 50 Hz
initial T
(A)
(A)
lead
2
3
0
1
10
current (RMS value) as a function of surge
duration for sinusoidal currents.
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
8
6
4
2
0
10 -3
1
65 C
j
25 C
BT1306-400D/600D
10 -2
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10 2
1
t surge (s)
Logic level triac
n
003aaa041
003aaa038
10 3
10
3 of 11